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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4145 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES * Low on-state resistance RDS(on) = 10 m MAX. (VGS = 10 V, ID = 42 A) * Low input capacitance Ciss = 5300 pF TYP. ORDERING INFORMATION PART NUMBER 2SK4145-S19-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tube 50 p/tube PACKAGE TO-220 typ. 1.9 g Note Pb-free (This product does not contain Pb in the external electrode). ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) www..com Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 60 20 84 215 84 1.5 150 -55 to +150 32 102 V V A A W W C C A mJ Drain Current (pulse) Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 30 V, RG = 25 , VGS = 20 0 V, L = 100 H THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.49 83.3 C/W C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18760EJ2V0DS00 (2nd edition) Date Published June 2007 NS Printed in Japan 2007 The mark 2SK4145 ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD TEST CONDITIONS VDS = 60 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 30 A VGS = 10 V, ID = 42 A VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 30 V, ID = 42 A, VGS = 10 V, RG = 0 MIN. TYP. MAX. 10 100 UNIT A nA V S 2.0 16 3.0 31 7 5300 540 330 25 17 66 9 4.0 Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note 10 m pF pF pF ns ns ns ns nC nC nC VDD = 48 V, VGS = 10 V, ID = 84 A IF = 84 A, VGS = 0 V IF = 84 A, VGS = 0 V, di/dt = 100 A/s 90 21 30 1.0 43 62 1.5 VF(S-D) trr Qrr V ns nC Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG RL VDD VGS VGS Wave Form www..com PG. VGS = 20 0 V 50 0 10% VGS 90% VDS 90% 90% 10% 10% BVDSS IAS ID VDD VDS VGS 0 = 1 s Duty Cycle 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 RL VDD 2 Data Sheet D18760EJ2V0DS 2SK4145 TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 PT - Total Power Dissipation - W 80 60 40 20 0 0 25 50 75 100 125 150 175 TC - Case Temperature - C TC - Case Temperature - C 1000 FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A 100 d it e im ) )L V on S( 1i 0 RD S = G ID(DC) (V ID(pulse) 1i 1i 0 DC PW =1 i m 00 i s s m i s 10 w Po D er is si t io pa 1 TC = 25C Single Pulse n d it e m Li 0.1 0.1 www..com 1 10 100 VDS - Drain to Source Voltage - V 1000 rth(t) - Transient Thermal Resistance - C/W TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 Rth(ch-A) = 83.3C/Wi 10 Rth(ch-C) = 1.49C/Wi 1 Single Pulse 0.1 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D18760EJ2V0DS 3 2SK4145 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 250 200 ID - Drain Current - A 1000 100 10 1 0.1 0.01 0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5 6 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V ID - Drain Current - A 150 100 50 0 TA = -55C 25C 75C 150C VGS = 10 V Pulsed VDS = 10 V Pulsed GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cut-off Voltage - V | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 TA = -55C 25C 75C 150C 10 4 3.5 3 2.5 2 1.5 1 0.5 0 -75 -25 25 75 125 175 Tch - Channel Temperature - C VDS = 10 V ID = 1 mA VDS = 10 V Pulsed 1 0.1 1 10 100 www..com ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m RDS(on) - Drain to Source On-state Resistance - m 20 16 12 8 4 0 0.1 1 10 100 1000 VGS = 10 V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 20 Pulsed 16 12 8 4 0 0 5 10 15 20 VGS - Gate to Source Voltage - V ID = 16.8 A 42 A 84 A ID - Drain Current - A 4 Data Sheet D18760EJ2V0DS 2SK4145 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 20 16 12 8 4 Pulsed 0 -75 -25 25 75 125 175 Tch - Channel Temperature - C SWITCHING CHARACTERISTICS 1000 10000 Ciss, Coss, Crss - Capacitance - pF VGS = 10 V ID = 42 A Ciss 1000 Coss VGS = 0 V f = 1 MHz 100 0.1 1 10 Crss 100 VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 60 12 VDD = 48 V 30 V 12 V 10 8 VGS 6 4 VDS ID = 84 A 0 0 0 10 20 30 40 50 60 70 80 90 2 VDS - Drain to Source Voltage - V 50 40 30 20 10 100 td(on) 10 tr VDD = 30 V VGS = 10 V RG = 0 1 0.1 1 td(off) tf 10 100 www..com ID - Drain Current - A QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 1000 REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 100 VGS = 10 V 0V trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 100 10 10 di/dt = 100 A/s VGS = 0 V 1 0.1 1 10 100 1 Pulsed 0.1 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A Data Sheet D18760EJ2V0DS 5 VGS - Gate to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 2SK4145 PACKAGE DRAWING (Unit: mm) TO-220 2.80.3 10.2 MAX. 3.60.2 8.7 TYP. 4.8 MAX. 1.30.2 4 123 6.3 MIN. 3.0 TYP. 1.520.2 0.80.1 2.54 TYP. 12.7 MIN. 0.50.2 15.9 MAX. 2.40.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) EQUIVALENT CIRCUIT Drain Gate Body Diode www..com Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 Data Sheet D18760EJ2V0DS 2SK4145 MARKING INFORMATION NEC K4145 Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS The 2SK4145 should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Wave soldering Soldering Conditions Maximum temperature (Solder temperature): 260C or below Time: 10 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less Recommended Condition Symbol THDWS Partial heating Maximum temperature (Pin temperature): 350C or below Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less P350 Caution Do not use different soldering methods together (except for partial heating). www..com Data Sheet D18760EJ2V0DS 7 2SK4145 * The information in this document is current as of June, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerwww..com designated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 |
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